Monolithically Integrated Enhancement-Mode and Depletion-Mode beta-Ga2O3 MESFETs with Graphene-Gate Architectures and Their Logic Applications
- Authors
- Kim, Janghyuk; Kim, Jihyun
- Issue Date
- 12-2월-2020
- Publisher
- AMER CHEMICAL SOC
- Keywords
- enhancement-mode FET; depletion-mode FET; ultrawide band gap; two-dimensional material; gallium oxide
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.12, no.6, pp.7310 - 7316
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 12
- Number
- 6
- Start Page
- 7310
- End Page
- 7316
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/57669
- DOI
- 10.1021/acsami.9b19667
- ISSN
- 1944-8244
- Abstract
- Ultrawide band gap (UWBG) beta-Ga2O3 is a promising material for next-generation power electronic devices. An enhancement-mode (E-mode) device is essential for designing power conversion systems with simplified circuitry and minimal loss. The integration of an E-mode field-effect transistor (FET) with a depletion-mode (D-mode) FET can build a high-performance logic circuit. In this study, we first demonstrated the realization of an E-mode quasi-two-dimensional (quasi-2D) beta-Ga2O3 FET with a novel graphene gate architecture via a van der Waals heterojunction. Then, we monolithically integrated it with a D-mode quasi-2D beta-Ga2O3 FET, achieving an area-efficient logic circuit. The threshold voltage of the n-channel UWBG beta-Ga2O3 material was controlled by forming a novel architecture of a double-gate graphene/beta-Ga2O3 heterojunction, where both graphene and beta-Ga2O3 were obtained by a mechanical exfoliation method. The fabricated double graphene-gate beta-Ga2O3 metal-semiconductor FET (MESFET) was operated in the E-mode with a positive threshold voltage of +0.25 V, which is approximately 1.2 V higher than that of a single-gate D-mode beta-Ga2O3 MESFET. Both E-/D-modes beta-Ga2O3 MESFETs showed excellent electrical characteristics with a subthreshold swing of 68.9 and 84.6 mV/dec, respectively, and a high on/off current ratio of approximately 10(7). A beta-Ga2O3 logic inverter composed of E-/D-mode beta-Ga2O3 devices exhibited desired inversion characteristics. The monolithic integration of an E-/D-mode quasi-2D FET with an UWBG channel layer can pave the way for various applications in smart and robust power (nano) electronics.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.