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Flexible NiO nanocrystal-based resistive memory device fabricated by low-temperature solution-process

Authors
Yun, Hye-WonWoo, Ho KunOh, Soong JuHong, Sung-Hoon
Issue Date
2월-2020
Publisher
ELSEVIER
Keywords
Flexible ReRAM; NiO nanocrystal; Low-temperature process; Solution-process
Citation
CURRENT APPLIED PHYSICS, v.20, no.2, pp.288 - 292
Indexed
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
20
Number
2
Start Page
288
End Page
292
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/57801
DOI
10.1016/j.cap.2019.11.019
ISSN
1567-1739
Abstract
In this study, a nickel oxide (NiO) nanocrystal (NC) based flexible resistive memory device is demonstrated at temperature as low as 180 degrees C by ligand exchange process. The fabricated device for flexible application with structure Ni/NiO/Ni on PI substrate exhibits excellent switching characteristics with low set/reset voltages and stable resistance values in both ON and OFF states for over 100 switching cycles of memory operation. Also, this flexible memory device shows stable resistive switching properties under compressive stress with bending radius to 10 mm and consecutive bending cycles. The ReRAM fabricated by a low-temperature solution-process shows potential for next generation flexible electronics.
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공과대학 (신소재공학부)
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