Electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs under positive gate bias stress
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, D. | - |
dc.contributor.author | Cho, K. | - |
dc.contributor.author | Woo, S. | - |
dc.contributor.author | Kim, S. | - |
dc.date.accessioned | 2021-08-31T12:24:40Z | - |
dc.date.available | 2021-08-31T12:24:40Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-01-23 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/57961 | - |
dc.description.abstract | In this Letter, the authors investigate the electrical characteristics of amorphous indium-tin-gallium-zinc-oxide (a-ITGZO) thin-film transistors (TFTs) under positive gate bias stress (PBS). An as-prepared a-ITGZO TFT exhibits a mobility of 26.05 cm(2)/V.s, subthreshold swing of 183 mV, threshold voltage of -0.33 V, and on/off ratio of 1.34 x 10(8). These electrical characteristics deteriorate upon the application of PBS. The proposed experiments and simulations reveal that this deterioration can be attributed to the increase in the density of acceptor-like conduction band-tail states and donor-like Gaussian states within the bandgap of the a-ITGZO channel material. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | INST ENGINEERING TECHNOLOGY-IET | - |
dc.title | Electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs under positive gate bias stress | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, S. | - |
dc.identifier.doi | 10.1049/el.2019.2784 | - |
dc.identifier.scopusid | 2-s2.0-85078219789 | - |
dc.identifier.wosid | 000507916900020 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.56, no.2, pp.102 - 103 | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 56 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 102 | - |
dc.citation.endPage | 103 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | semiconductor thin films | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | conduction bands | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | zinc compounds | - |
dc.subject.keywordAuthor | amorphous semiconductors | - |
dc.subject.keywordAuthor | tin compounds | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordAuthor | positive gate bias stress | - |
dc.subject.keywordAuthor | PBS | - |
dc.subject.keywordAuthor | a-ITGZO TFT | - |
dc.subject.keywordAuthor | electrical characteristics | - |
dc.subject.keywordAuthor | a-ITGZO channel material | - |
dc.subject.keywordAuthor | amorphous indium-tin-gallium-zinc-oxide thin-film transistors | - |
dc.subject.keywordAuthor | subthreshold swing | - |
dc.subject.keywordAuthor | threshold voltage | - |
dc.subject.keywordAuthor | acceptor-like conduction band-tail states | - |
dc.subject.keywordAuthor | donor-like Gaussian states | - |
dc.subject.keywordAuthor | bandgap | - |
dc.subject.keywordAuthor | voltage 183 | - |
dc.subject.keywordAuthor | 0 mV | - |
dc.subject.keywordAuthor | voltage-0 | - |
dc.subject.keywordAuthor | 33 V | - |
dc.subject.keywordAuthor | InSnGaZnO | - |
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