Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering
DC Field | Value | Language |
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dc.contributor.author | Kim, Taikyu | - |
dc.contributor.author | Kim, Jeong-Kyu | - |
dc.contributor.author | Yoo, Baekeun | - |
dc.contributor.author | Xu, Hongwei | - |
dc.contributor.author | Yim, Sungyeon | - |
dc.contributor.author | Kim, Seung-Hwan | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-08-31T14:41:08Z | - |
dc.date.available | 2021-08-31T14:41:08Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2020-01-07 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/58341 | - |
dc.description.abstract | A low on-off current modulation ratio (I-ON/OFF) in p-type tin monoxide (SnO) field-effect transistors (FETs) is a critical bottleneck hampering their widespread application to transparent complementary metal oxide semiconductors (CMOSs) or monolithic integrated devices. To solve this problem, this study focuses on the source/drain (S/D) contact region. Also, a new perspective on the origin of the high off-current in SnO FETs, an electron injection from the drain electrode into the channel by Fermi-level pinning (FLP) at the off-state, is suggested. In this work, a metal-interlayer-semiconductor (MIS) S/D contact structure is adopted to suppress this adverse electron injection. An ultrathin interlayer (IL) of MIS contact alleviates metal-induced gap state (MIGS) penetration which is a primary cause of the severe FLP. A considerable enhancement is achieved by using the MIS contact structure: the off-current value decreased by approximately 20-fold from 5.1 x 10(-8) A to 2.4 x 10(-9) A; the I-ON/OFF value increased 10-fold from 2.7 x 10(2) to 2.8 x 10(3), which is interpreted by increased MIS contact-mediated electron SBH. This work presents a new approach that can be easily used alongside previously reported methods to suppress the off-current, providing enhanced switching capability of p-type SnO FETs using a simple method. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | THIN-FILMS | - |
dc.subject | CONTACT RESISTIVITY | - |
dc.subject | INTERFACIAL LAYER | - |
dc.subject | PERFORMANCE | - |
dc.subject | REDUCTION | - |
dc.subject | GE | - |
dc.subject | FABRICATION | - |
dc.title | Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1039/c9tc04345d | - |
dc.identifier.scopusid | 2-s2.0-85077743324 | - |
dc.identifier.wosid | 000507309500017 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.8, no.1, pp.201 - 208 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 8 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 201 | - |
dc.citation.endPage | 208 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | CONTACT RESISTIVITY | - |
dc.subject.keywordPlus | INTERFACIAL LAYER | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | FABRICATION | - |
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