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Improvement of Structural and Optical properties of GaN Epilayer Grown by Patterned ion Implantation

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dc.contributor.authorBYUN, Dong Jin-
dc.date.accessioned2021-08-31T17:49:35Z-
dc.date.available2021-08-31T17:49:35Z-
dc.date.created2021-04-22-
dc.date.issued2006-11-30-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/59918-
dc.publisherThe Institute of Electrical Engineers of Japan-
dc.titleImprovement of Structural and Optical properties of GaN Epilayer Grown by Patterned ion Implantation-
dc.title.alternativeImprovement of Structural and Optical properties of GaN Epilayer Grown by Patterned ion Implantation-
dc.typeConference-
dc.contributor.affiliatedAuthorBYUN, Dong Jin-
dc.identifier.bibliographicCitationINTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006)-
dc.relation.isPartOfINTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006)-
dc.relation.isPartOfINTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006)-
dc.citation.titleINTERNATIONAL SYMPOSIUM ON DRY PROECESS(DPS 2006)-
dc.citation.conferencePlaceJA-
dc.citation.conferencePlaceNagoya, Japan-
dc.citation.conferenceDate2006-11-29-
dc.type.rimsCONF-
dc.description.journalClass1-
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