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Effect of N+-Ion-Implanted Sapphire (0001) Substrates on Characteristic Properties of AlGaN/GaN High Electron Mobility Transistors Grown by MOCVDEffect of N+-Ion-Implanted Sapphire (0001) Substrates on Characteristic Properties of AlGaN/GaN High Electron Mobility Transistors Grown by MOCVD
- Alternative Title
- Effect of N+-Ion-Implanted Sapphire (0001) Substrates on Characteristic Properties of AlGaN/GaN High Electron Mobility Transistors Grown by MOCVD
- Authors
- BYUN, Dong Jin
- Issue Date
- 23-2월-2006
- Publisher
- 한국재료학회
- Citation
- 제 13회 한국반도체학술대회
- Conference Name
- 제 13회 한국반도체학술대회
- Place
- KO
- Conference Date
- 2006-02-23
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