Comparison of temperature dependent carrier transport in FinFET and gate-all-around nanowire FET
- Authors
- Kim, S.; Kim, J.; Jang, D.; Ritzenthaler, R.; Parvais, B.; Mitard, J.; Mertens, H.; Chiarella, T.; Horiguchi, N.; Lee, J.W.
- Issue Date
- 2020
- Publisher
- MDPI AG
- Keywords
- Effective mobility; FinFET; GAA NW-FET; Surface roughness scattering; Temperature dependence
- Citation
- Applied Sciences (Switzerland), v.10, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Sciences (Switzerland)
- Volume
- 10
- Number
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/60764
- DOI
- 10.3390/APP10082979
- ISSN
- 2076-3417
- Abstract
- The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25-125 °C). A similar temperature dependence of threshold voltage (VTH) and subthreshold swing (SS) is observed for both devices. However, effective mobility (μeff) shows significant differences of temperature dependence between GAA NW-FET and FinFET at a high gate effective field. At weak Ninv (= 5 x 1012 cm2/V. s), both GAA NW-FET and FinFET are mainly limited by phonon scattering in μeff. On the other hand, at strong Ninv (= 1.5 x 1013 cm2/V. s), GAA NW-FET shows 10 times higher dμeff/dT and 1.6 times smaller mobility degradation coefficient (ff) than FinFET. GAA NW-FET is less limited by surface roughness scattering, but FinFET is relatively more limited by surface roughness scattering in carrier transport. © 2020 by the authors.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - Graduate School > Department of Electronics and Information Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.