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Large Magnetoconductance in GaAs Induced by Impact Ionization
- Authors
- Kim, Taeyueb; Joo, Sungjung; Koo, Hyun Cheol; Hong, Jinki
- Issue Date
- Dec-2019
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Magnetoresistance; Impact ionization; Avalanche effect; Space-charge effect; GaAs
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.75, no.12, pp.1017 - 1020
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 75
- Number
- 12
- Start Page
- 1017
- End Page
- 1020
- ISSN
- 0374-4884
- Abstract
- We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.
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