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Band Alignment Engineering between Planar SnO2 and Halide Perovskites via Two-Step Annealing

Authors
Lee, Jung HwanShin, DongguenRhee, RyanYun, SangeunYeom, Kyung MunChun, Do HyungLee, SunjeKim, DonghoYi, YeonjinNoh, Jun HongPark, Jong Hyeok
Issue Date
7-11월-2019
Publisher
AMER CHEMICAL SOC
Citation
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, v.10, no.21, pp.6545 - 6550
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume
10
Number
21
Start Page
6545
End Page
6550
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/61916
DOI
10.1021/acs.jpclett.9b02488
ISSN
1948-7185
Abstract
Managing defects in SnO2 is critical for improving the power conversion efficiency (PCE) of halide perovskite-based solar cells. However, typically reported SnO2 _based perovskite solar cells have inherent defects in the SnO2 layer, which lead to a lower PCE and hysteresis. Here, we report that a dual-coating approach for SnO2 with different annealing temperatures can simultaneously form a SnO2 layer with high crystallinity and uniform surface coverage. Along with these enhanced physical properties, the dual-coated SnO2 layer shows favorable band alignment with a mixed halide perovskite. After careful optimization of the dual-coating method, the average PCE of the perovskite solar cell based on the dual-coated SnO2 layer increases from 18.07 to 19.23% with a best-performing cell of 20.03%. Note that a facile two-step coating and annealing method can open new avenues to develop SnO2-based perovskite solar cells with stabilized and improved photovoltaic performances.
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