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Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices?

Authors
Kim, JihyunRen, F.Pearton, S. J.
Issue Date
1-11월-2019
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE HORIZONS, v.4, no.6, pp.1251 - 1255
Indexed
SCIE
SCOPUS
Journal Title
NANOSCALE HORIZONS
Volume
4
Number
6
Start Page
1251
End Page
1255
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/61952
DOI
10.1039/c9nh00273a
ISSN
2055-6756
Abstract
There is currently great interest in ultra-wide bandgap semiconductors for their applicability in power switching electronics with improved efficiency compared to current technologies and also to solar-blind UV detection. One of the most promising materials is Ga2O3, available in large area bulk crystals and as exfoliated nano-layers (nanobelts, nanomembranes, and nanosheets). One aspect of this material that has not been widely recognized is the sensitivity of its surface to environment. The goal of this brief focus article is to provide some insight into the mechanisms and defects that underlie this effect and explain inconsistencies in the literature.
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