Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Low-energy spin-orbit torque MTJ-based non-volatile flip-flop with data-aware backup technique
- Issue Date
- 31-10월-2019
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Keywords
- random-access storage; magnetoelectronics; flip-flops; low-power electronics; magnetic tunnelling; magnetic circuits; data-aware backup technique; spin-orbit torque magnetic tunnel junction based nonvolatile flip-flops; zero-leakage standby state; power-gating mode; data-aware backup scheme; stored data; low-area backup signal generator; data backup scheme; backup energy; MTJ-based NVFFs; energy saving; size 65; 0 nm
- Citation
- ELECTRONICS LETTERS, v.55, no.22, pp.1178 - 1179
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 55
- Number
- 22
- Start Page
- 1178
- End Page
- 1179
- ISSN
- 0013-5194
- Abstract
- Spin-orbit torque magnetic tunnel junction (MTJ) based non-volatile flip-flops (NVFFs) have been introduced to provide zero-leakage standby state without data loss in power-gating mode. In this Letter, the data-aware backup scheme for NVFF, where significant energy can be saved by performing data backup only when the stored data and the current data are different is proprosed. Low-area backup signal generator is also proposed for the proposed data backup scheme. The simulation results with 65 nm process show 88.7% reduction in backup energy when the stored data and the current data are equal.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.