Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact
DC Field | Value | Language |
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dc.contributor.author | Kim, Seung-Hwan | - |
dc.contributor.author | Han, Kyu Hyun | - |
dc.contributor.author | Park, Euyjin | - |
dc.contributor.author | Kim, Seung-Geun | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-01T06:10:25Z | - |
dc.date.available | 2021-09-01T06:10:25Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-09-18 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/62856 | - |
dc.description.abstract | Energy barrier formed at a metal/semiconductor interface is a critical factor determining the performance of nano-electronic devices. Although diverse methods for reducing the Schottky barrier height (SBH) via interface engineering have been developed, it is still difficult to achieve both an ultralow SBH and a low dependence on the contact metals. In this study, a novel structure, namely, a metal/ transition-metal dichalcogenide (TMD) interlayer (IL)/dielectric IL/semiconductor (MTDS) structure, was developed to overcome these issues. Molybdenum disulfide (MoS2) is a promising TMD IL material owing to its interface characteristics, which yields a low SBH and reduces the reliance on contact metals. Moreover, an ultralow SBH is achieved via the insertion of an ultrathin ZnO layer between MoS2 and a semiconductor, thereby inducing an n-type doping effect on the MoS2 IL and forming an interface dipole in the favorable direction at the ZnO IL/semiconductor interfaces. Consequently, the lowest SBH (0.07 eV) and a remarkable improvement in the reverse current density (by a factor of approximately 5400) are achieved, with a wide room for contact-metal dependence. This study experimentally and theoretically validates the effect of the proposed MTDS structure, which can be a key technique for next-generation nanoelectronics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | INTERLAYER-SEMICONDUCTOR STRUCTURE | - |
dc.subject | METAL | - |
dc.subject | SHIFT | - |
dc.subject | FILMS | - |
dc.subject | TIO2 | - |
dc.title | Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1021/acsami.9b10746 | - |
dc.identifier.scopusid | 2-s2.0-85072509543 | - |
dc.identifier.wosid | 000487179900060 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.11, no.37, pp.34084 - 34090 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 11 | - |
dc.citation.number | 37 | - |
dc.citation.startPage | 34084 | - |
dc.citation.endPage | 34090 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | INTERLAYER-SEMICONDUCTOR STRUCTURE | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | SHIFT | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | TIO2 | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
dc.subject.keywordAuthor | Fermi-level pinning | - |
dc.subject.keywordAuthor | molybdenum disulfide | - |
dc.subject.keywordAuthor | metal-induced gap state | - |
dc.subject.keywordAuthor | III-V semiconductor | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | source/drain contact | - |
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