Si nanowires with porous segments for photon-triggered transistors
- Authors
- Kim, Jungkil; Lee, Hoo-Cheol; Kim, Ha-Reem; Lee, Hosung; Lee, Jung Min; Jeong, Kwang-Yong; Park, Hong-Gyu
- Issue Date
- 11-9월-2019
- Publisher
- IOP PUBLISHING LTD
- Keywords
- Si nanowire; porous structure; photon-triggered transistor; logic gate; photodetector
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.52, no.37
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 52
- Number
- 37
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/62881
- DOI
- 10.1088/1361-6463/ab2abc
- ISSN
- 0022-3727
- Abstract
- Optical triggering for current generation in a single Si nanowire embedded with porous segments is studied to demonstrate photon-triggered transistors with a high on-off ratio. The formation of multiple localized porous Si structures in a nanowire and their uniform and sensitive responses to light enable practical implementation of photonic devices such as photon-triggered logic gates and high-resolution photodetectors. This review introduces the recent progress on the photon-triggered nanowire transistors. First, it describes two methods to synthesize porous Si segments in a nanowire and analysis of their structural properties. Second, the review describes the experimental and theoretical characterizations of photon-triggered nanowire transistors. Third, it introduces the design and implementation of logic gates, including AND, OR, and NAND, and multi-pixel photodetectors using a single Si nanowire with two or more porous Si segments. This review suggests that an effective integration of photon-triggered transistors in a single nanowire can serve as a versatile platform for new multifunctional optoelectronic devices.
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