A 270-GHz CMOS Triple-Push Ring Oscillator With a Coupled-Line Matching Network
DC Field | Value | Language |
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dc.contributor.author | Kim, Sooyeon | - |
dc.contributor.author | Yoon, Daekeun | - |
dc.contributor.author | Rich, Jae-Sung | - |
dc.date.accessioned | 2021-09-01T07:18:11Z | - |
dc.date.available | 2021-09-01T07:18:11Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-09 | - |
dc.identifier.issn | 2156-342X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/62961 | - |
dc.description.abstract | A design procedure is proposed for triple-push ring oscillators, and an oscillator employing a coupled line-matching network is developed following the procedure. This stepwise procedure, which uses power-dependent Z-parameters of transistors, is applied to the design of each amplifier stage constituting a ring oscillator based on its steady-state oscillation condition. It is verified with both L-section and T-section topologies assumed for the load of the amplifier stages of a given triple-push ring oscillator, and the differences between the two topologies are compared. Based on the procedure, a 270 GHz triple-push ring oscillator that employs coupled lines for matching networks has been developed in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The circuit benefits from the advantages of coupled lines such as compact area and simplified layout. The fabricated oscillator exhibits a measured oscillation frequency of around 270 GHz and output power of -10.9 dBm, with phase noise of -96 dBc/Hz at 10 MHz offset. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | HIGH-EFFICIENCY | - |
dc.subject | DESIGN | - |
dc.subject | VCO | - |
dc.title | A 270-GHz CMOS Triple-Push Ring Oscillator With a Coupled-Line Matching Network | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Rich, Jae-Sung | - |
dc.identifier.doi | 10.1109/TTHZ.2019.2923556 | - |
dc.identifier.scopusid | 2-s2.0-85067806139 | - |
dc.identifier.wosid | 000484292100001 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.9, no.5, pp.449 - 462 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | - |
dc.citation.title | IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 9 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 449 | - |
dc.citation.endPage | 462 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-EFFICIENCY | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | VCO | - |
dc.subject.keywordAuthor | complementary metal-oxide-semiconductor (CMOS) | - |
dc.subject.keywordAuthor | coupled lines | - |
dc.subject.keywordAuthor | harmonic generation | - |
dc.subject.keywordAuthor | millimeter wave | - |
dc.subject.keywordAuthor | oscillators | - |
dc.subject.keywordAuthor | ring oscillators | - |
dc.subject.keywordAuthor | submillimeter wave | - |
dc.subject.keywordAuthor | terahertz | - |
dc.subject.keywordAuthor | triple push | - |
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