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A 1.6V 1.4Gbps/pin Consumer DRAM with Self-Dynamic Voltage Scaling Technique in 44nm CMOS Technology

Authors
KIM, Chulwoo
Publisher
IEEE
Citation
IEEE International Solid-State Circuits Conference
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/63104
Conference Name
IEEE International Solid-State Circuits Conference
Place
US
Conference Date
2011-02-20
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College of Engineering > School of Electrical Engineering > 2. Conference Papers

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