Fabrication of a WS2/p-Si Heterostructure Photocathode Using Direct Hybrid Thermolysis
- Authors
- Hasani, Amirhossein; Quyet Van Le; Tekalgne, Mahider; Choi, Min-Ju; Choi, Seokhoon; Lee, Tae Hyung; Kim, Hayeong; Ahn, Sang Hyun; Jang, Ho Won; Kim, Soo Young
- Issue Date
- 21-8월-2019
- Publisher
- AMER CHEMICAL SOC
- Keywords
- WS2; heterostructures; thermolysis; hydrogen; heterojunction; 2D materials
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.11, no.33, pp.29910 - 29916
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 11
- Number
- 33
- Start Page
- 29910
- End Page
- 29916
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/63492
- DOI
- 10.1021/acsami.9b08654
- ISSN
- 1944-8244
- Abstract
- P-N heterostructures based on transition-metal dichelcongenides (TMDs) and a conventional semiconductor, such as p-Si, have been considered a promising structure for next-generation electronic devices and applications. However, synthesis of high-quality, wafer-scale TMDs, particularly WS2 on p-Si, is challenging. Herein, we propose an efficient method to directly grow WS2 crystals on p-Si via a hybrid thermolysis process. The WO3 is deposited to prepare the p-Si surface for coating of the (NH4)(2)WS4 precursor and converted to WS2/p-Si during thermolysis. Moreover, the WS2/p-Si heterojunction photocathode is fabricated and used in solar hydrogen production. The fabricated n-WS2/p-Si heterojunction provided an onset potential of +0.022 V at 10 mA/cm(2) and a benchmark current density of -9.8 +/- 1.2 mA/cm(2) at 0 V. This method reliably and efficiently produced high-quality, wafer-scale WS2 crystals and overcame the challenges associated with previous approaches. The approach developed in this research demonstrates a magnificent progress in the fabrication of 2D material-based electronic devices.
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