Nanoscale 3D Stackable Ag-Doped HfOx-Based Selector Devices Fabricated through Low-Temperature Hydrogen Annealing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Ju Hyun | - |
dc.contributor.author | Kim, Donghyun | - |
dc.contributor.author | Kang, Dae Yun | - |
dc.contributor.author | Jeon, Dong Su | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-01T08:37:23Z | - |
dc.date.available | 2021-09-01T08:37:23Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2019-08-14 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/63530 | - |
dc.description.abstract | Electrochemical metallization-based threshold switching devices with active metal electrodes have been studied as a selector for high-density resistive random access memory (RRAM) technology in crossbar array architectures. However, these devices are not suitable for integration with three-dimensional (3D) crossbar RRAM arrays due to the difficulty in vertical stacking and/or scaling into the nanometer regime as well as the asymmetric threshold switching behavior and large variation in the operating voltage. Here, we demonstrate bidirectional symmetric threshold switching behaviors from a simple Pt/Ag-doped HfOx/Pt structure. While fabricating the Pt/Ag-doped HfOx/Pt film using a 250 nm hole structure, filaments composed of Ag nanoclusters were constructed through a low-temperature (similar to 200 degrees C) hydrogen annealing process where the shape of the film in a nanoscale via a hole structure was maintained for integration with 3D stackable crossbar RRAM arrays. Finite Ag filament paths in the HfOx layer led to uniform device-to-device performances. Moreover, we observed that the hydrogen annealing process reduced the delay time through the reduction of the oxygen vacancies in the HfOx layer. Consequently, the proposed Pt/Ag-doped HfOx/Pt-based nanoscale selector devices exhibited excellent performance of high selectivity (similar to 10(5)), ultralow OFF current (similar to 10 pA), steep turn-on slope (similar to 2 mV/decade), and short delay time (3 mu s). | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FILMS | - |
dc.title | Nanoscale 3D Stackable Ag-Doped HfOx-Based Selector Devices Fabricated through Low-Temperature Hydrogen Annealing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1021/acsami.9b08166 | - |
dc.identifier.scopusid | 2-s2.0-85070870614 | - |
dc.identifier.wosid | 000481567100089 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.11, no.32, pp.29408 - 29415 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 11 | - |
dc.citation.number | 32 | - |
dc.citation.startPage | 29408 | - |
dc.citation.endPage | 29415 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | selector device | - |
dc.subject.keywordAuthor | threshold switching | - |
dc.subject.keywordAuthor | crossbar array | - |
dc.subject.keywordAuthor | resistive switching | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.