Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits
DC Field | Value | Language |
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dc.contributor.author | Shim, Jaewoo | - |
dc.contributor.author | Jang, Sung Woon | - |
dc.contributor.author | Lim, Ji-Hye | - |
dc.contributor.author | Kim, Hyeongjun | - |
dc.contributor.author | Kang, Dong-Ho | - |
dc.contributor.author | Kim, Kwan-Ho | - |
dc.contributor.author | Seo, Seunghwan | - |
dc.contributor.author | Heo, Keun | - |
dc.contributor.author | Shin, Changhwan | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Lee, Sungjoo | - |
dc.contributor.author | Ko, Dae-Hong | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-09-01T11:28:32Z | - |
dc.date.available | 2021-09-01T11:28:32Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-07-21 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/64079 | - |
dc.description.abstract | Recently, there have been various attempts to demonstrate the feasibility of transition metal dichalcogenide (TMD) transistors for digital logic circuits. A complementary inverter circuit, which is a basic building block of a logic circuit, was implemented in earlier works by heterogeneously integrating n- and p-channel transistors fabricated on different TMD materials. Subsequently, to simplify the circuit design and fabrication process, complementary inverters were constructed on single-TMD materials using ambipolar transistors. However, continuous transition from the electron-conduction to the hole-conduction state in the ambipolar devices led to the problem of a high leakage current. Here, we report a polarity-controllable TMD transistor that can operate as both an n- and a p-channel transistor with a low leakage current of a few picoamperes. The device polarity can be switched simply by converting the sign of the drain voltage. This is because a metal-like tungsten ditelluride (WTe2) with a low carrier concentration is used as a drain contact, which subsequently allows selective carrier injection at the palladium/tungsten diselenide (WSe2) junction. In addition, by using the operating principle of the polarity-controllable transistor, we demonstrate a complementary inverter circuit on a single TMD channel material (WSe2), which exhibits a very low static power consumption of a few hundred picowatts. Finally, we confirm the expandability of this polarity-controllable transistor toward more complex logic circuits by presenting the proper operation of a three-stage ring oscillator. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | BAND-STRUCTURE | - |
dc.subject | INVERTERS | - |
dc.subject | PERFORMANCE | - |
dc.title | Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1039/c9nr03441b | - |
dc.identifier.scopusid | 2-s2.0-85069502558 | - |
dc.identifier.wosid | 000475482200011 | - |
dc.identifier.bibliographicCitation | NANOSCALE, v.11, no.27, pp.12871 - 12877 | - |
dc.relation.isPartOf | NANOSCALE | - |
dc.citation.title | NANOSCALE | - |
dc.citation.volume | 11 | - |
dc.citation.number | 27 | - |
dc.citation.startPage | 12871 | - |
dc.citation.endPage | 12877 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | BAND-STRUCTURE | - |
dc.subject.keywordPlus | INVERTERS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
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