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Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking

Authors
Hwang, SunbinJang, SukjaeKang, MinjiBae, SukangLee, Seoung-KiHong, Jae-MinLee, Sang HyunWang, GunukFabiano, SimoneBerggren, MagnusKim, Tae-Wook
Issue Date
17-7월-2019
Publisher
AMER CHEMICAL SOC
Keywords
organic ferroelectric memory; organic field-effect transistor; bis-FB-N-3; inverter; switchable functions
Citation
ACS APPLIED MATERIALS & INTERFACES, v.11, no.28, pp.25358 - 25368
Indexed
SCIE
SCOPUS
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
11
Number
28
Start Page
25358
End Page
25368
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/64091
DOI
10.1021/acsami.9b07462
ISSN
1944-8244
Abstract
Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future.
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