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A WR-3 Band Fundamental Voltage-Controlled Oscillator With a Wide Frequency Tuning Range and High Output Power

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dc.contributor.authorKim, Dongkyo-
dc.contributor.authorJeo, Sanggeun-
dc.date.accessioned2021-09-01T12:50:26Z-
dc.date.available2021-09-01T12:50:26Z-
dc.date.created2021-06-19-
dc.date.issued2019-07-
dc.identifier.issn0018-9480-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/64230-
dc.description.abstractThis paper presents a 300-GHz voltage-controlled oscillator (VCO) with a wide frequency tuning range and high output power. To generate fundamental oscillation at 300 GHz, a cascode cross-coupled pair is employed as a VCO core instead of a conventional common-emitter pair. Capacitive emitter degeneration is added to the VCO core to achieve a wide bandwidth of a negative conductance. In addition, the phase of the oscillation feedback loop is analyzed and optimized to further extend the tuning range. The VCO is fabricated in a 0.25-mu m InP DHBT technology (f(T)/f(max) = 392/859 GHz). Measurements show that the VCO frequency is tuned from 272.4 to 310.8 GHz with a peak output power of 1.5 dBm. To the best of authors' knowledge, this is the widest tuning range of 38.4 GHz (a fractional bandwidth of 13.2%) among the reported fundamental VCOs at the WR-3 band.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectHIGH-EFFICIENCY-
dc.subjectFMCW-RADAR-
dc.subjectGHZ-
dc.subjectVCOS-
dc.subjectTECHNOLOGY-
dc.subjectSILICON-
dc.subjectDESIGN-
dc.subjectFUTURE-
dc.subjectSENSOR-
dc.subjectTHZ-
dc.titleA WR-3 Band Fundamental Voltage-Controlled Oscillator With a Wide Frequency Tuning Range and High Output Power-
dc.typeArticle-
dc.contributor.affiliatedAuthorJeo, Sanggeun-
dc.identifier.doi10.1109/TMTT.2019.2916836-
dc.identifier.scopusid2-s2.0-85068443688-
dc.identifier.wosid000473597700030-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.67, no.7, pp.2759 - 2768-
dc.relation.isPartOfIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.citation.titleIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.citation.volume67-
dc.citation.number7-
dc.citation.startPage2759-
dc.citation.endPage2768-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusHIGH-EFFICIENCY-
dc.subject.keywordPlusFMCW-RADAR-
dc.subject.keywordPlusGHZ-
dc.subject.keywordPlusVCOS-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusDESIGN-
dc.subject.keywordPlusFUTURE-
dc.subject.keywordPlusSENSOR-
dc.subject.keywordPlusTHZ-
dc.subject.keywordAuthorCapacitive degeneration-
dc.subject.keywordAuthorcascode cross-coupled pair-
dc.subject.keywordAuthorterahertz (THz) monolithic integrated circuits-
dc.subject.keywordAuthorvoltage-controlled oscillator (VCO)-
dc.subject.keywordAuthorwide frequency tuning range-
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공과대학 (전기전자공학부)
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