Electrically-doped CVD-graphene transparent electrodes: application in 365 nm light-emitting diodes
- Authors
- Chae, Myung-Sic; Lee, Tae Ho; Son, Kyung Rock; Kim, Yong Woon; Hwang, Kyo Seon; Kim, Tae Geun
- Issue Date
- 1-5월-2019
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- NANOSCALE HORIZONS, v.4, no.3, pp.610 - 618
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCALE HORIZONS
- Volume
- 4
- Number
- 3
- Start Page
- 610
- End Page
- 618
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/65793
- DOI
- 10.1039/c8nh00374b
- ISSN
- 2055-6756
- Abstract
- Electric-field-induced doping treatment is applied to a monolayer graphene (MLG) film to improve its usability as a transparent conductive electrode (TCE). Ni is used as a doping source, which produces conductive bridges consisting of ionized Ni by electromigration from an Ni pad to the as-transferred chemical vapor deposition grown MLG films through AlN buffer layers, by applying voltages of 3.62 +/- 0.34 V. As a result, the sheet resistance of the MLG reduces from 712 +/- 75.2 X sq(-1) to 216 +/- 46.1 X sq(-1) and the surface current increases from 6.63 +/- 2.07 nA to 8.91 +/- 1.62 nA. Additionally, the work function of the MLG increases from 4.36 eV to 5.0 eV due to p-type doping effects. The intercalation of Ni atoms into the MLG is directly confirmed by X-ray photoelectron spectroscopy and Raman spectrum analyses. Finally, the Ni-doped MLG is utilized as the TCE layer for 365 nm light-emitting diodes, exhibiting much better optical properties compared to a standard LED with a 100 nm-thick indium tin oxide electrode.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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