Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
20-Gb/s ON-OFF-Keying Modulators Using 0.25-mu m InP DHBT Switches at 290 GHz
- Authors
- Yi, C.; Choi, S. H.; Urteaga, M.; Kim, M.
- Issue Date
- 5월-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- InP double heterojuction bipolar transistor (DHBT); terahertz ON-OFF-keying (OOK) modulator; terahertz switch
- Citation
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.29, no.5, pp.360 - 362
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
- Volume
- 29
- Number
- 5
- Start Page
- 360
- End Page
- 362
- ISSN
- 1531-1309
- Abstract
- Performances of high-speed switches operating as terahertz on-off-keying (OOK) modulators are reported. Two types of switches, a passive shunt switch and an amplifier switch, are fabricated using 0.25-mu m InP double heterojuction bipolar transistor (DHBT) technology. Small-signal tests show that the amplifier switch possesses superior on-off ratio, but the passive switch has broader bandwidth and smaller group delay ripples. A modulator test setup is built with 20-dB path loss between the transmitter and the receiver. The results indicate that carrier power levels of 14 dBm for the shunt switch and 8 dBm for the amplifier switch are required for 20-Gb/s OOK modulation with bit error rate (BER) of 10(-2) at 290 GHz.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.