Plasma parameters, gas-phase chemistry and Si/SiO2 etching mechanisms in HBr + Cl-2 + O-2 gas mixture: Effect of HBr/O-2 mixing ratio
DC Field | Value | Language |
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dc.contributor.author | Lee, Byung Jun | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-01T15:41:44Z | - |
dc.date.available | 2021-09-01T15:41:44Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-05 | - |
dc.identifier.issn | 0042-207X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/65841 | - |
dc.description.abstract | Features of plasma chemistry as well as peculiarities of etching mechanisms for Si and SiO2 in the HBr + Cl-2 + O-2 gas mixture with variable HBr/O-2 mixing ratio were investigated using a combination of experimental and theoretical approaches. Plasma diagnostics by Langmuir probe and 0-dimensional (global) plasma modeling provided the information on gas-phase plasma parameters, formation/decay kinetics of plasma active species and the steady-state plasma composition. It was found that the substitution of HBr for O-2 at constant Cl-2 fraction in a feed gas 1) leads to a weak increase in electron density, ion density and the ion energy flux; 2) influences the kinetics of neutral species through reactions involving O atoms and their reaction products; and 3) results in increasing total halogen atom density. It was shown also that the change in HBr/O-2 mixing ratio causes the opposite behaviors of Si and SiO2 etching rates and lifts the SiO2/Si etching selectivity up to similar to 10 in highly oxygenated plasmas. The analysis of Si and SiO2 etching kinetics with model-predicted fluxes of plasma active species indicated the different etching mechanisms for these materials. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | INDUCTIVELY-COUPLED PLASMA | - |
dc.subject | MODEL-BASED ANALYSIS | - |
dc.subject | HIGH-DENSITY PLASMA | - |
dc.subject | SURFACE KINETICS | - |
dc.subject | CROSS-SECTIONS | - |
dc.subject | SILICON | - |
dc.subject | CL-2 | - |
dc.subject | TIME | - |
dc.subject | AR | - |
dc.subject | SI | - |
dc.title | Plasma parameters, gas-phase chemistry and Si/SiO2 etching mechanisms in HBr + Cl-2 + O-2 gas mixture: Effect of HBr/O-2 mixing ratio | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1016/j.vacuum.2019.02.014 | - |
dc.identifier.scopusid | 2-s2.0-85061454357 | - |
dc.identifier.wosid | 000462690400016 | - |
dc.identifier.bibliographicCitation | VACUUM, v.163, pp.110 - 118 | - |
dc.relation.isPartOf | VACUUM | - |
dc.citation.title | VACUUM | - |
dc.citation.volume | 163 | - |
dc.citation.startPage | 110 | - |
dc.citation.endPage | 118 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | INDUCTIVELY-COUPLED PLASMA | - |
dc.subject.keywordPlus | MODEL-BASED ANALYSIS | - |
dc.subject.keywordPlus | HIGH-DENSITY PLASMA | - |
dc.subject.keywordPlus | SURFACE KINETICS | - |
dc.subject.keywordPlus | CROSS-SECTIONS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | CL-2 | - |
dc.subject.keywordPlus | TIME | - |
dc.subject.keywordPlus | AR | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordAuthor | Si and SiO2 etching rates | - |
dc.subject.keywordAuthor | Halogen atom flux | - |
dc.subject.keywordAuthor | Oxygen atom flux | - |
dc.subject.keywordAuthor | Ion energy flux | - |
dc.subject.keywordAuthor | Effective reaction probability | - |
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