A CMOS W-Band Amplifier with Tunable Neutralization Using a Cross-Coupled MOS-varactor Pair
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yook, Byungho | - |
dc.contributor.author | Park, Kwangwon | - |
dc.contributor.author | Park, Seungwon | - |
dc.contributor.author | Lee, Hyunkyu | - |
dc.contributor.author | Kim, Taehoon | - |
dc.contributor.author | Park, Jong Sung | - |
dc.contributor.author | Jeon, Sanggeun | - |
dc.date.accessioned | 2021-09-01T15:51:05Z | - |
dc.date.available | 2021-09-01T15:51:05Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-05 | - |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/65913 | - |
dc.description.abstract | This paper presents a CMOS W-band amplifier adopting a novel neutralization technique for high gain and stability. The W-band amplifier consists of four common-source differential gain cells that are neutralized by a cross-coupled MOS-varactor pair. Contrary to conventional neutralizations, the proposed technique enables tunable neutralization, so that the gate-to-drain capacitance of transistors is accurately tracked and neutralized as the varactor voltage is adjusted. This makes the neutralization tolerant of capacitance change caused by process-voltage-temperature (PVT) variation or transistor model inaccuracy, which commonly occurs at mm-wave frequencies. The proposed tunable neutralization is experimentally confirmed by measuring gain and stability of the W-band amplifier fabricated in a 65-nm CMOS process. The amplifier achieves a measured gain of 17.5 dB at 79 GHz and a 3-dB bandwidth from 77.5 to 84 GHz without any stability issue. The DC power consumption is 56.7 mW and the chip area is 0.85 mm(2). | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | POWER-AMPLIFIER | - |
dc.subject | TRANSCEIVER | - |
dc.subject | PAE | - |
dc.title | A CMOS W-Band Amplifier with Tunable Neutralization Using a Cross-Coupled MOS-varactor Pair | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Sanggeun | - |
dc.identifier.doi | 10.3390/electronics8050537 | - |
dc.identifier.scopusid | 2-s2.0-85088215184 | - |
dc.identifier.wosid | 000470999900068 | - |
dc.identifier.bibliographicCitation | ELECTRONICS, v.8, no.5 | - |
dc.relation.isPartOf | ELECTRONICS | - |
dc.citation.title | ELECTRONICS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | POWER-AMPLIFIER | - |
dc.subject.keywordPlus | TRANSCEIVER | - |
dc.subject.keywordPlus | PAE | - |
dc.subject.keywordAuthor | CMOS W-band amplifier | - |
dc.subject.keywordAuthor | tunable neutralization | - |
dc.subject.keywordAuthor | MOS-varactor | - |
dc.subject.keywordAuthor | transformer-based impedance matching | - |
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