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Noncollinear magnetoresistance of trilayers consisting of two ferromagnetic GaMnAs layers and a nonmagnetic GaAs:Be spacer
- Authors
- Lee, Sangyeop; Lee, Kyung Jae; Choi, Seonghoon; Bac, Seul-Ki; Chang, Jihoon; Choi, Suho; Chongthanaphisut, Phunvira; Lee, Sanghoon; Liu, Xinyu; Dobrowolska, M.; Furdyna, Jacek K.
- Issue Date
- 15-4월-2019
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Characterization; Molecular beam epitaxy; Multilayer; Semiconducting III-V materials (Ferromagnetic semiconductors, Giant magnetoresistance, Noncollinear alignments, Planar Hall effect, Magnetic memory)
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.512, pp.176 - 180
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 512
- Start Page
- 176
- End Page
- 180
- ISSN
- 0022-0248
- Abstract
- The magnetotransport properties of a GaMnAs trilayer in which two GaMnAs layers are separated by a nonmagnetic GaAs:Be spacer has been investigated during the magnetization reversal process. Interestingly, the planar Hall resistance (PHR) reveals that the two GaMnAs layers in a trilayer structure have opposite signs of anisotropic magnetoresistance (AMR). The magnetoresistance is observed to be significantly different for the collinear and noncollinear magnetic alignment, which indicates that the presence of the giant magnetoresistance (GMR)-like effect in the system. This GMR-like effect was systematically investigated during the process of magnetization reversal using field and angle scans of MR measurements.
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Collections - College of Science > Department of Physics > 1. Journal Articles
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