Ultrahigh Deep-UV Sensitivity in Graphene-Gated beta-Ga2O3 Phototransistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Suhyun | - |
dc.contributor.author | Oh, Sooyeoun | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-01T17:06:31Z | - |
dc.date.available | 2021-09-01T17:06:31Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.issn | 2330-4022 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/66546 | - |
dc.description.abstract | Deep-ultraviolet (UV) photodetectors based on ultrawide bandgap beta-Ga2O3 have a great potential in civil or military applications especially due to its inherent solar-blindness. Metal-semiconductor phototransistors based on exfoliated beta-Ga2O3 were fabricated using graphene as a highly transparent gate electrode. Controlling the potential barrier at the metal semiconductor junction through the UV-transparent graphene gate expanded the difference between the UV-illuminated current and the dark current. Therefore, the photo-to-dark current ratio (PDCR) was raised by 6 orders of magnitude under the optimal gate bias. The performances of beta-Ga2O3 phototransistors were exceptionally superior among the deep-UV photodetectors based on wide bandgap semiconductor materials; PDCR of 6.0 X 10(8) and rejection ratio of 5.3 X 10(6) could be achieved. The synergetic combination of an ultrawide bandgap semiconductor and two-dimensional UV-transparent graphene provides a new opportunity for high performance deep-UV photodetectors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | SOLAR-BLIND PHOTODETECTOR | - |
dc.subject | THIN-FILM | - |
dc.subject | POWER | - |
dc.subject | PHOTODIODES | - |
dc.subject | NANOWIRES | - |
dc.subject | SINGLE | - |
dc.subject | GROWTH | - |
dc.title | Ultrahigh Deep-UV Sensitivity in Graphene-Gated beta-Ga2O3 Phototransistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1021/acsphotonics.9b00032 | - |
dc.identifier.scopusid | 2-s2.0-85063134882 | - |
dc.identifier.wosid | 000465188900029 | - |
dc.identifier.bibliographicCitation | ACS PHOTONICS, v.6, no.4, pp.1026 - 1032 | - |
dc.relation.isPartOf | ACS PHOTONICS | - |
dc.citation.title | ACS PHOTONICS | - |
dc.citation.volume | 6 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1026 | - |
dc.citation.endPage | 1032 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SOLAR-BLIND PHOTODETECTOR | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | PHOTODIODES | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | SINGLE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | gallium oxide | - |
dc.subject.keywordAuthor | deep-ultraviolet | - |
dc.subject.keywordAuthor | phototransistor | - |
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