Ultrahigh Deep-UV Sensitivity in Graphene-Gated beta-Ga2O3 Phototransistors
- Authors
- Kim, Suhyun; Oh, Sooyeoun; Kim, Jihyun
- Issue Date
- 4월-2019
- Publisher
- AMER CHEMICAL SOC
- Keywords
- graphene; gallium oxide; deep-ultraviolet; phototransistor
- Citation
- ACS PHOTONICS, v.6, no.4, pp.1026 - 1032
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS PHOTONICS
- Volume
- 6
- Number
- 4
- Start Page
- 1026
- End Page
- 1032
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/66546
- DOI
- 10.1021/acsphotonics.9b00032
- ISSN
- 2330-4022
- Abstract
- Deep-ultraviolet (UV) photodetectors based on ultrawide bandgap beta-Ga2O3 have a great potential in civil or military applications especially due to its inherent solar-blindness. Metal-semiconductor phototransistors based on exfoliated beta-Ga2O3 were fabricated using graphene as a highly transparent gate electrode. Controlling the potential barrier at the metal semiconductor junction through the UV-transparent graphene gate expanded the difference between the UV-illuminated current and the dark current. Therefore, the photo-to-dark current ratio (PDCR) was raised by 6 orders of magnitude under the optimal gate bias. The performances of beta-Ga2O3 phototransistors were exceptionally superior among the deep-UV photodetectors based on wide bandgap semiconductor materials; PDCR of 6.0 X 10(8) and rejection ratio of 5.3 X 10(6) could be achieved. The synergetic combination of an ultrawide bandgap semiconductor and two-dimensional UV-transparent graphene provides a new opportunity for high performance deep-UV photodetectors.
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