Al2O3/AlN/Al-based backside diffuse reflector for high-brightness 370-nm AlGaN ultraviolet light-emitting diodes
- Authors
- Park, Tae Hoon; Lee, Tae Ho; Kim, Tae Geun
- Issue Date
- 5-3월-2019
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Ultraviolet; Light-emitting diodes; Backside reflector; Surface treatment
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.776, pp.1009 - 1015
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 776
- Start Page
- 1009
- End Page
- 1015
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/67012
- DOI
- 10.1016/j.jallcom.2018.10.264
- ISSN
- 0925-8388
- Abstract
- We report an Al2O3/AlN/Al-based backside diffuse reflector for near-ultraviolet light-emitting diodes (NUV LEDs), and its superiority compared with conventional reflectors. After fabrication of LEDs, a sapphire (Al2O3) surface was UV-irradiated to utilize the diffuse reflection effect by roughening the surface. Then, a thermally treated AlN layer was deposited on it, to obtain a mirror-like surface, before deposition of Al. The reflectance increased by 1.3% and 3.9% for these Al2O3/AlN/Al reflectors without and with surface treatment, respectively, compared with an Al reflector. These reflectors were then used with 370 nm AlGaN NUV LEDs, and the performances of LEDs without and with an Al reflector were compared. As a result, the NUV LED with both thermally and UV-treated AlN/Al reflector exhibited the best performance, and its output power and electroluminescence intensity were higher by 82.7% and 41.9%, respectively, than those of the LED without a reflector. (C) 2018 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.