A 300-GHz SPST Switch With a New Coupled-Line Topology in 65-nm CMOS Technology
- Authors
- Kim, Jungsoo; Kim, Sooyeon; Song, Kiryong; Rieh, Jae-Sung
- Issue Date
- 3월-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- CMOS technology; coupled line; single-pole single-throw (SPST); switches; THz
- Citation
- IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY, v.9, no.2, pp.215 - 218
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
- Volume
- 9
- Number
- 2
- Start Page
- 215
- End Page
- 218
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/67092
- DOI
- 10.1109/TTHZ.2019.2898815
- ISSN
- 2156-342X
- Abstract
- A single-pole single-throw (SPST) switch operating around 300 GHz has been developed in this letter based on a 65-nm CMOS technology. The SPST switch adopts a novel coupled-line topology, in which MOSFETs are employed as a variable impedance component at the through-and coupled-ports to achieve a large isolation. Over the measured frequency band of 220-320 GHz, a minimum insertion loss of 3.9 dB (at 303 GHz) and a maximum isolation of 66 dB (at 250 GHz) were obtained. This achieved peak isolation is the largest value obtained so far beyond 100 GHz with a CMOS switch. An isolation larger than 39 dB was maintained for the entire frequency band measured. The measured return loss showed a maximum value of 29 dB at 312 GHz.
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