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Synthesis of Polytypic Gallium Phosphide and Gallium Arsenide Nanowires and Their Application as Photodetectors

Authors
Park, KidongLee, JinhaKim, DoyeonSeo, JaeminKim, JundongAhn, Jae-PyoungPark, Jeunghee
Issue Date
2월-2019
Publisher
AMER CHEMICAL SOC
Citation
ACS OMEGA, v.4, no.2, pp.3098 - 3104
Indexed
SCIE
SCOPUS
Journal Title
ACS OMEGA
Volume
4
Number
2
Start Page
3098
End Page
3104
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/67830
DOI
10.1021/acsomega.8b03548
ISSN
2470-1343
Abstract
One-dimensional semiconductor nanowires often contain polytypic structures, owing to the co-existence of different crystal phases. Therefore, understanding the properties of polytypic structures is of paramount importance for many promising applications in high-performance nanodevices. Herein, we synthesized nanowires of typical III-V semiconductors, namely, gallium phosphide and gallium arsenide by using the chemical vapor transport method. The growth directions ([111] and [211]) could be switched by changing the experimental conditions, such as H-2 gas flow; thus, various polytypic structures were produced simultaneously in a controlled manner. The nanobeam electron diffraction technique was employed to obtain strain mapping of the nanowires by visualizing the polytypic structures along the [111] direction. Micro-Raman spectra for individual nanowires were collected, confirming the presence of wurtzite phase in the polytypic nanowires. Further, we fabricated the photodetectors using the single nanowires, and the polytypic structures are shown to decrease the photosensitivity. Our systematic analysis provides important insight into the polytypic structures of nanowires.
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