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Interlayer Exchange Coupling Between Fe and GaMnAs Ferromagnetic Semiconductor
- Authors
- Tivakornsasithorn, Kritsanu; Lee, Sangyeop; Bac, Seul-Ki; Choi, Seonghoon; Lee, Sanghoon; Liu, Xinyu; Dobrowolska, Margaret; Furdyna, Jacek K.
- Issue Date
- 2월-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Ferromagnetic (FM) films; interlayer exchange coupling (IEC); magnetic anisotropy; planar Hall effect
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.55, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 55
- Number
- 2
- ISSN
- 0018-9464
- Abstract
- Interlayer exchange coupling (IEC) between ferromagnetic (FM) metal Fe and FM semiconductor GaMnAs has been investigated by using magnetotransport measurements. The realization of diverse magnetization alignments, including collinear and non-collinear configurations, between Fe and GaMnAs layers are observed during the magnetization reversal process measured by the planar Hall effect. Minor loop scan reveals the presence of FM IEC between Fe and GaMnAs, which systematically decreases as the temperature increases.
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