Fabrication of HfO2/TiO2-based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Oh, Sang Hoon | - |
dc.contributor.author | Lee, Tae Ho | - |
dc.contributor.author | Son, Kyung-Rock | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-01T21:17:40Z | - |
dc.date.available | 2021-09-01T21:17:40Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-01-30 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/68231 | - |
dc.description.abstract | Distributed Bragg reflector (DBR) has been used to enhance the performance of various optoelectronic devices because of its higher reflectance than metal reflector, particularly at a specific wavelength. However, the insulating property of the DBR structure have limited its use where the current injection is required (e.g., below electrodes). Here, we introduce a way to overcome this limit, by creating conductive paths in the DBR-electrode structure using an electrical breakdown process; thereby, achieving an ohmic contact with p-GaN contact layers, and finally apply to ultraviolet micro-light-emitting diodes (mu LEDs) to verify the validity of the method. Specifically, by inserting three pairs of TiO2/HfO2 -based conductive DBR structures under a Cr/Ni/Au-based p-type electrode, the reflectance of the p-type electrode was increased up to 95%, simultaneously increasing the output power of the mu LED by 5% by reducing the light absorption at the p-type electrode by the reflection of light without electrical losses. This approach is expected to offer a great flexibility in the design of conventional devices using DBR structures. (C) 2018 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | ENHANCEMENT | - |
dc.subject | EFFICIENCY | - |
dc.subject | EMISSION | - |
dc.subject | ARRAYS | - |
dc.subject | POWER | - |
dc.title | Fabrication of HfO2/TiO2-based conductive distributed Bragg reflectors: Its application to GaN-based near-ultraviolet micro-light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1016/j.jallcom.2018.09.287 | - |
dc.identifier.scopusid | 2-s2.0-85053851680 | - |
dc.identifier.wosid | 000449741200055 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.773, pp.490 - 495 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 773 | - |
dc.citation.startPage | 490 | - |
dc.citation.endPage | 495 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordAuthor | Ultraviolet | - |
dc.subject.keywordAuthor | Light-emitting diodes | - |
dc.subject.keywordAuthor | Distributed Bragg reflector | - |
dc.subject.keywordAuthor | Light extraction efficiency | - |
dc.subject.keywordAuthor | Electrical breakdown process | - |
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