Passivation quality control in poly-Si/SiOx/c-Si passivated contact solar cells with 734 mV implied open circuit voltage
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, HyunJung | - |
dc.contributor.author | Park, Hyomin | - |
dc.contributor.author | Park, Se Jin | - |
dc.contributor.author | Bae, Soohyun | - |
dc.contributor.author | Kim, Hyunho | - |
dc.contributor.author | Yang, Jee Woong | - |
dc.contributor.author | Hyun, Ji Yeon | - |
dc.contributor.author | Lee, Chang Hyun | - |
dc.contributor.author | Shin, Seung Hyun | - |
dc.contributor.author | Kang, Yoonmook | - |
dc.contributor.author | Lee, Hae-Seok | - |
dc.contributor.author | Kim, Donghwan | - |
dc.date.accessioned | 2021-09-01T22:28:15Z | - |
dc.date.available | 2021-09-01T22:28:15Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2019-01 | - |
dc.identifier.issn | 0927-0248 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/68807 | - |
dc.description.abstract | Passivation quality of poly-Si contacts with different phosphorus doping concentration were investigated in this study. Intrinsic poly-Si layers were deposited by LPCVD on a tunnel oxide surface, followed by n + poly-Si doping and hydrogenation. For lightly doped poly-Si contacts with phosphorus concentration of 2.1 x 10(19) cm(-3), higher temperatures and longer times increased iV(oc) achieving maximum value of 734 mV, as poly-Si grain size increases from 13 nm to 40 nm. However, for heavily doped poly-Si contacts with phosphorus concentration of 1.1 x 10(20)cm(-3), iV(oc) decreased from 731 mV to 696 mV as annealing time increased from 10 to 60 min because Auger recombination rate increased from 9.3 fA/cm(2) to 21.6 fA/cm(2) as phosphorus in-diffusion occurs. The contact resistance of poly-Si contacts was also investigated to achieve a high fill factor. Finally, a poly-Si/SiOx/c-Si passivated contact solar cell using a poly-Si contact on the back and boron diffused emitter on the front was fabricated. As a result, high efficiency of 21.1% solar cell was achieved with V-oc of 665 mV, J(sc) of 40.6 mA/cm(2), and fill factor of 78.3%. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | EFFICIENCY | - |
dc.subject | POLYSILICON | - |
dc.subject | RESISTIVITY | - |
dc.subject | JUNCTIONS | - |
dc.title | Passivation quality control in poly-Si/SiOx/c-Si passivated contact solar cells with 734 mV implied open circuit voltage | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Yoonmook | - |
dc.contributor.affiliatedAuthor | Lee, Hae-Seok | - |
dc.contributor.affiliatedAuthor | Kim, Donghwan | - |
dc.identifier.doi | 10.1016/j.solmat.2018.09.013 | - |
dc.identifier.scopusid | 2-s2.0-85053771950 | - |
dc.identifier.wosid | 000452586000005 | - |
dc.identifier.bibliographicCitation | SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.189, pp.21 - 26 | - |
dc.relation.isPartOf | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.title | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - |
dc.citation.volume | 189 | - |
dc.citation.startPage | 21 | - |
dc.citation.endPage | 26 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Energy & Fuels | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Energy & Fuels | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | POLYSILICON | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | JUNCTIONS | - |
dc.subject.keywordAuthor | Polysilicon | - |
dc.subject.keywordAuthor | Tunnel oxide | - |
dc.subject.keywordAuthor | Passivated contact | - |
dc.subject.keywordAuthor | N-type silicon | - |
dc.subject.keywordAuthor | High efficiency | - |
dc.subject.keywordAuthor | Solar cell | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.