Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Son, Kyung Rock | - |
dc.contributor.author | Lee, Byeong Ryong | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-02T02:14:13Z | - |
dc.date.available | 2021-09-02T02:14:13Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2018-12-05 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/71238 | - |
dc.description.abstract | Light extraction of microscale light-emitting diodes (mu LEDs) is fundamentally limited by p-type metal electrodes for current injection due to the small pixel size of the LEDs. We propose Cr/Ni-doped silicon oxide (CN-SiOX) films as p-type contact electrodes for blue mu LEDs to increase the light-output power under the same emitting areas. The conductivity of CN-SiOX electrode originates from the diffusion of top Cr/Ni atoms via electric-field-induced doping treatments, which allows for effective hole injection into the active layer. Consequently, we achieved a 62% improvement in the current density and a 47% increase in the light-output power compared to ITO-based mu LEDs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | PRINTED ASSEMBLIES | - |
dc.subject | DISPLAY | - |
dc.title | Chromium/Nickel-Doped Silicon Oxide Thin-Film Electrode: Mechanism and Application to Microscale Light-Emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1021/acsami.8b15364 | - |
dc.identifier.scopusid | 2-s2.0-85057533346 | - |
dc.identifier.wosid | 000452694100001 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.48, pp.40967 - 40972 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 48 | - |
dc.citation.startPage | 40967 | - |
dc.citation.endPage | 40972 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | PRINTED ASSEMBLIES | - |
dc.subject.keywordPlus | DISPLAY | - |
dc.subject.keywordAuthor | microscale light-emitting diodes | - |
dc.subject.keywordAuthor | electrical doping treatment | - |
dc.subject.keywordAuthor | silicon oxide | - |
dc.subject.keywordAuthor | transmittance | - |
dc.subject.keywordAuthor | hole injection | - |
dc.subject.keywordAuthor | Schottky barrier height | - |
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