Structural Properties of Silicon Implanted with Unfiltered Boron Plasma Ions

Abstract

The structural damage of silicon substrates implanted with unfiltered boron plasma ions and energy-massselective boron ions were investigated. Silicon substrates implanted with boron plasma ions showed higher boron concentration near the surface. Those higher concentration was associated with fully amorphization near the silicon surface. On the contrast, silicon substrates implanted with energy- and mass selected boron ions exhibited buried amorphization near the surface. In silicon implanted with unfiltered plasma ions, a large amount of hydrogen species was co-implanted during the process and generated hydrogen-related damage under the amorphized region. After the solid phase epitaxial regrowth, most of the hydrogen-related damage was annealed out, and extended boron defects were observed in the nearby projected range.