Structural Properties of Silicon Implanted with Unfiltered Boron Plasma Ions
- Authors
- Park, Hyomin; Park, Sungeun; Park, Se Jin; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan
- Issue Date
- 12월-2018
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Boron Molecular Ion Implantation; Unfiltered Plasma Ions; Boron Emitter
- Citation
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.13, no.12, pp.1793 - 1796
- Indexed
- SCIE
- Journal Title
- JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
- Volume
- 13
- Number
- 12
- Start Page
- 1793
- End Page
- 1796
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/71373
- DOI
- 10.1166/jno.2018.2399
- ISSN
- 1555-130X
- Abstract
- The structural damage of silicon substrates implanted with unfiltered boron plasma ions and energy-massselective boron ions were investigated. Silicon substrates implanted with boron plasma ions showed higher boron concentration near the surface. Those higher concentration was associated with fully amorphization near the silicon surface. On the contrast, silicon substrates implanted with energy- and mass selected boron ions exhibited buried amorphization near the surface. In silicon implanted with unfiltered plasma ions, a large amount of hydrogen species was co-implanted during the process and generated hydrogen-related damage under the amorphized region. After the solid phase epitaxial regrowth, most of the hydrogen-related damage was annealed out, and extended boron defects were observed in the nearby projected range.
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- Appears in
Collections - Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL) > Department of Energy and Environment > 1. Journal Articles
- College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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