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Enhanced Performance and SRAM Stability in FinFET with Reduced Process Steps for Source/Drain Doping
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ji-Woon Yang | - |
| dc.date.accessioned | 2021-09-02T02:57:57Z | - |
| dc.date.available | 2021-09-02T02:57:57Z | - |
| dc.date.created | 2021-04-22 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/71629 | - |
| dc.publisher | Industrial Technology Research Institute (ITRI) | - |
| dc.title | Enhanced Performance and SRAM Stability in FinFET with Reduced Process Steps for Source/Drain Doping | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | Ji-Woon Yang | - |
| dc.identifier.bibliographicCitation | IEEE International Symposium on VLSI Technology, System, and Applications | - |
| dc.relation.isPartOf | IEEE International Symposium on VLSI Technology, System, and Applications | - |
| dc.citation.title | IEEE International Symposium on VLSI Technology, System, and Applications | - |
| dc.citation.conferencePlace | CH | - |
| dc.citation.conferenceDate | 2008-04-21 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 1 | - |
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