Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Enhanced Performance and SRAM Stability in FinFET with Reduced Process Steps for Source/Drain Doping
- Authors
- Ji-Woon Yang
- Publisher
- Industrial Technology Research Institute (ITRI)
- Citation
- IEEE International Symposium on VLSI Technology, System, and Applications
- Conference Name
- IEEE International Symposium on VLSI Technology, System, and Applications
- Place
- CH
- Conference Date
- 2008-04-21
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.