High Gain beta-Ga2O3 Solar-Blind Schottky Barrier Photodiodes via Carrier Multiplication Process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Sooyeoun | - |
dc.contributor.author | Kim, Hyoung Woo | - |
dc.contributor.author | Kim, Jihyun | - |
dc.date.accessioned | 2021-09-02T04:04:51Z | - |
dc.date.available | 2021-09-02T04:04:51Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2018-11-01 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/71895 | - |
dc.description.abstract | beta-Ga2O3, which is a ultra-wide band-gap semiconductor, is an attractive material for next-generation solar-blind photodetectors. A high gain solar-blind Schottky barrier photodetector using an exfoliated single crystalline beta-Ga2O3 nano-layer was demonstrated by employing internal carrier multiplication process. Excellent spectral selectivity with high responsivity was obtained between UV-A and UV-C wavelengths with fast response/decay characteristics. The gain of our beta-Ga2O3 solar-blind PD was similar to 3.78 x 10(3) under the multiplication mode at the reverse bias of -60 V, where the peak electric field was estimated to be 4.3 MV/cm (equivalent to impact ionization coefficient of 5 x 10(3) cm(-1)). Compared with non-multiplication mode, outstanding photo-sensing performances were achieved under the multiplication mode, including a responsivity of 8.18 A/W, a photocurrent-to-dark-current ratio of similar to 10(3) and external quantum efficiency of similar to 4 x 10(3)%. High gain via carrier multiplication process in a beta-Ga2O3 photodiode proposes a new route toward high performance solar-blind deep-UV photodetectors. (c) 2018 The Electrochemical Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | PHOTODETECTORS | - |
dc.title | High Gain beta-Ga2O3 Solar-Blind Schottky Barrier Photodiodes via Carrier Multiplication Process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
dc.identifier.doi | 10.1149/2.0151811jss | - |
dc.identifier.scopusid | 2-s2.0-85070110029 | - |
dc.identifier.wosid | 000449086500001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.7, no.11, pp.Q196 - Q200 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 7 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | Q196 | - |
dc.citation.endPage | Q200 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.