High Gain beta-Ga2O3 Solar-Blind Schottky Barrier Photodiodes via Carrier Multiplication Process
- Authors
- Oh, Sooyeoun; Kim, Hyoung Woo; Kim, Jihyun
- Issue Date
- 1-11월-2018
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.7, no.11, pp.Q196 - Q200
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
- Volume
- 7
- Number
- 11
- Start Page
- Q196
- End Page
- Q200
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/71895
- DOI
- 10.1149/2.0151811jss
- ISSN
- 2162-8769
- Abstract
- beta-Ga2O3, which is a ultra-wide band-gap semiconductor, is an attractive material for next-generation solar-blind photodetectors. A high gain solar-blind Schottky barrier photodetector using an exfoliated single crystalline beta-Ga2O3 nano-layer was demonstrated by employing internal carrier multiplication process. Excellent spectral selectivity with high responsivity was obtained between UV-A and UV-C wavelengths with fast response/decay characteristics. The gain of our beta-Ga2O3 solar-blind PD was similar to 3.78 x 10(3) under the multiplication mode at the reverse bias of -60 V, where the peak electric field was estimated to be 4.3 MV/cm (equivalent to impact ionization coefficient of 5 x 10(3) cm(-1)). Compared with non-multiplication mode, outstanding photo-sensing performances were achieved under the multiplication mode, including a responsivity of 8.18 A/W, a photocurrent-to-dark-current ratio of similar to 10(3) and external quantum efficiency of similar to 4 x 10(3)%. High gain via carrier multiplication process in a beta-Ga2O3 photodiode proposes a new route toward high performance solar-blind deep-UV photodetectors. (c) 2018 The Electrochemical Society.
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