Low-energy band structure very sensitive to the interlayer distance in Bernal-stacked tetralayer graphene
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kyu Won | - |
dc.contributor.author | Lee, Cheol Eui | - |
dc.date.accessioned | 2021-09-02T04:10:06Z | - |
dc.date.available | 2021-09-02T04:10:06Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2018-11 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/71940 | - |
dc.description.abstract | We have investigated Bernal-stacked tetralayer graphene as a function of interlayer distance and perpendicular electric field by using density functional theory calculations. The low-energy band structure was found to be very sensitive to the interlayer distance, undergoing a metal-insulator transition. It can be attributed to the nearest-layer coupling that is more sensitive to the interlayer distance than are the next-nearest-layer couplings. Under a perpendicular electric field above a critical field, six electric-field-induced Dirac cones with mass gaps predicted in tight-binding models were confirmed, however, our density functional theory calculations demonstrate a phase transition to a quantum valley Hall insulator, contrasting to the tight-binding model prediction of an ordinary insulator. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Low-energy band structure very sensitive to the interlayer distance in Bernal-stacked tetralayer graphene | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Kyu Won | - |
dc.contributor.affiliatedAuthor | Lee, Cheol Eui | - |
dc.identifier.doi | 10.1016/j.cap.2018.08.003 | - |
dc.identifier.scopusid | 2-s2.0-85051561227 | - |
dc.identifier.wosid | 000446676900036 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.18, no.11, pp.1393 - 1398 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 18 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 1393 | - |
dc.citation.endPage | 1398 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002406757 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Tetralayer graphene | - |
dc.subject.keywordAuthor | Interlayer couplings | - |
dc.subject.keywordAuthor | Metal-insulator transition | - |
dc.subject.keywordAuthor | Quantum valley Hall effect | - |
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