Low-energy band structure very sensitive to the interlayer distance in Bernal-stacked tetralayer graphene
- Authors
- Lee, Kyu Won; Lee, Cheol Eui
- Issue Date
- 11월-2018
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Tetralayer graphene; Interlayer couplings; Metal-insulator transition; Quantum valley Hall effect
- Citation
- CURRENT APPLIED PHYSICS, v.18, no.11, pp.1393 - 1398
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 18
- Number
- 11
- Start Page
- 1393
- End Page
- 1398
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/71940
- DOI
- 10.1016/j.cap.2018.08.003
- ISSN
- 1567-1739
- Abstract
- We have investigated Bernal-stacked tetralayer graphene as a function of interlayer distance and perpendicular electric field by using density functional theory calculations. The low-energy band structure was found to be very sensitive to the interlayer distance, undergoing a metal-insulator transition. It can be attributed to the nearest-layer coupling that is more sensitive to the interlayer distance than are the next-nearest-layer couplings. Under a perpendicular electric field above a critical field, six electric-field-induced Dirac cones with mass gaps predicted in tight-binding models were confirmed, however, our density functional theory calculations demonstrate a phase transition to a quantum valley Hall insulator, contrasting to the tight-binding model prediction of an ordinary insulator.
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