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SiC Nanopowders-Incorporated Dual-Channel TiZnSnO/ZnSnO Thin Film Transistors

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dc.contributor.authorCho, Seulki-
dc.contributor.authorPark, Sung-Joon-
dc.contributor.authorMin, Seong-Ji-
dc.contributor.authorAn, Jae-In-
dc.contributor.authorYoon, Yo-Seop-
dc.contributor.authorMoon, Byungmoo-
dc.contributor.authorChoi, Youngwoong-
dc.contributor.authorLee, Sang-Kwon-
dc.contributor.authorKoo, Sang-Mo-
dc.date.accessioned2021-09-02T04:56:47Z-
dc.date.available2021-09-02T04:56:47Z-
dc.date.created2021-06-18-
dc.date.issued2018-11-
dc.identifier.issn1941-4900-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/72403-
dc.description.abstractIn this study, we investigated the effect of incorporating silicon carbide (SiC) nanopowders (NPs) on the electrical properties of dual-channel TiZnSnO/ZnSnO (TZTO/ZTO) thin film transistors (TFTs) with different Ti molar ratios. Our results show that solution processed TZTO/ZTO TFT devices incorporating SiC NPs show a current (IDS @ VGS similar to 5 V) increase from similar to 5.56 x 10(6) to similar to 9.41 x 10(6) A. It was found that the addition of Ti on ZTO layers results in changing their carrier concentration due to the decrease of O2- ions, with a resulting decrease of the off-current. The on/off current ratio of the TFTs was as large as 7.22 x 10(3) at 0.01 M Ti molar ratio with SiC NPs.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectOXIDE-
dc.subjectPERFORMANCE-
dc.subjectOXIDATION-
dc.subjectBEHAVIOR-
dc.titleSiC Nanopowders-Incorporated Dual-Channel TiZnSnO/ZnSnO Thin Film Transistors-
dc.typeArticle-
dc.contributor.affiliatedAuthorMoon, Byungmoo-
dc.identifier.doi10.1166/nnl.2018.2831-
dc.identifier.wosid000451082200012-
dc.identifier.bibliographicCitationNANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.10, no.11, pp.1562 - 1566-
dc.relation.isPartOfNANOSCIENCE AND NANOTECHNOLOGY LETTERS-
dc.citation.titleNANOSCIENCE AND NANOTECHNOLOGY LETTERS-
dc.citation.volume10-
dc.citation.number11-
dc.citation.startPage1562-
dc.citation.endPage1566-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusOXIDATION-
dc.subject.keywordPlusBEHAVIOR-
dc.subject.keywordAuthorSilicon-Carbide Nanopowders-
dc.subject.keywordAuthorTi-Zinc-Tin Oxide-
dc.subject.keywordAuthorDual-Channel-
dc.subject.keywordAuthorThin Film Transistors-
dc.subject.keywordAuthorSolution Process-
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