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SiC Nanopowders-Incorporated Dual-Channel TiZnSnO/ZnSnO Thin Film Transistors
- Authors
- Cho, Seulki; Park, Sung-Joon; Min, Seong-Ji; An, Jae-In; Yoon, Yo-Seop; Moon, Byungmoo; Choi, Youngwoong; Lee, Sang-Kwon; Koo, Sang-Mo
- Issue Date
- 11월-2018
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Silicon-Carbide Nanopowders; Ti-Zinc-Tin Oxide; Dual-Channel; Thin Film Transistors; Solution Process
- Citation
- NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.10, no.11, pp.1562 - 1566
- Indexed
- SCIE
- Journal Title
- NANOSCIENCE AND NANOTECHNOLOGY LETTERS
- Volume
- 10
- Number
- 11
- Start Page
- 1562
- End Page
- 1566
- ISSN
- 1941-4900
- Abstract
- In this study, we investigated the effect of incorporating silicon carbide (SiC) nanopowders (NPs) on the electrical properties of dual-channel TiZnSnO/ZnSnO (TZTO/ZTO) thin film transistors (TFTs) with different Ti molar ratios. Our results show that solution processed TZTO/ZTO TFT devices incorporating SiC NPs show a current (IDS @ VGS similar to 5 V) increase from similar to 5.56 x 10(6) to similar to 9.41 x 10(6) A. It was found that the addition of Ti on ZTO layers results in changing their carrier concentration due to the decrease of O2- ions, with a resulting decrease of the off-current. The on/off current ratio of the TFTs was as large as 7.22 x 10(3) at 0.01 M Ti molar ratio with SiC NPs.
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