Super steep-switching (SS approximate to 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O-3 threshold switching device
DC Field | Value | Language |
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dc.contributor.author | Shin, Jaemin | - |
dc.contributor.author | Ko, Eunah | - |
dc.contributor.author | Park, June | - |
dc.contributor.author | Kim, Seung-Geun | - |
dc.contributor.author | Lee, Jae Woo | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Shin, Changhwan | - |
dc.date.accessioned | 2021-09-02T06:31:05Z | - |
dc.date.available | 2021-09-02T06:31:05Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-09-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/73144 | - |
dc.description.abstract | A Pb(Zr0.52Ti0.48)O-3 (PZT) threshold-switching (TS) device with abrupt resistive switching (similar to 5 to 6 orders) at a threshold voltage of similar to 1.1 V and high off-state resistance (approximately 1 x 10(10)Omega) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of similar to 2 mV/decade at 300 K). Published by AIP Publishing. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | NEGATIVE CAPACITANCE | - |
dc.subject | VOLTAGE | - |
dc.subject | SLOPE | - |
dc.title | Super steep-switching (SS approximate to 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O-3 threshold switching device | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jae Woo | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1063/1.5030966 | - |
dc.identifier.scopusid | 2-s2.0-85053008481 | - |
dc.identifier.wosid | 000444037000023 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.113, no.10 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 113 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NEGATIVE CAPACITANCE | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | SLOPE | - |
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