Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seung-Hwan | - |
dc.contributor.author | Kim, Gwang-Sik | - |
dc.contributor.author | Park, June | - |
dc.contributor.author | Lee, Changmin | - |
dc.contributor.author | Kim, Hyoungsub | - |
dc.contributor.author | Kim, Jiyoung | - |
dc.contributor.author | Sim, Joon Hyung | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2021-09-02T07:48:31Z | - |
dc.date.available | 2021-09-02T07:48:31Z | - |
dc.date.created | 2021-06-16 | - |
dc.date.issued | 2018-08-08 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/73786 | - |
dc.description.abstract | In the post-Moore era, it is well-known that contact resistance has been a critical issue in determining the performance of complementary metal-oxide-semiconductor (CMOS) reaching physical limits. Conventional Ohmic contact techniques, however, have hindered rather than helped the development of CMOS technology reaching its limits of scaling. Here, a novel conductive filament metal-interlayer-semiconductor (CF-MIS) contact-which achieves ultralow contact resistance by generating CFs and lowering Schottky barrier height (SBH)-is investigated for potential applications in various nanodevices in lieu of conventional Ohmic contacts. This universal and innovative technique, CF-MIS contact, forming the CFs to provide a quantity of electron paths as well as tuning SBH of semiconductor is first introduced. The proposed CF-MIS contact achieves ultralow specific contact resistivity, exhibiting up to similar to x700 000 reduction compared to that of the conventional metal-semiconductor contact. This study proves the viability of CF-MIS contacts for future Ohmic contact schemes and that they can easily be extended to mainstream electronic nanodevices that suffer from significant contact resistance problems. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | SCHOTTKY-BARRIER HEIGHT | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | INTERFACIAL LAYER | - |
dc.subject | GAAS | - |
dc.subject | RESISTIVITY | - |
dc.subject | GE | - |
dc.subject | PERFORMANCE | - |
dc.subject | REDUCTION | - |
dc.title | Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sim, Joon Hyung | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1021/acsami.8b07066 | - |
dc.identifier.scopusid | 2-s2.0-85049982854 | - |
dc.identifier.wosid | 000441477800061 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.31, pp.26378 - 26386 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 31 | - |
dc.citation.startPage | 26378 | - |
dc.citation.endPage | 26386 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | SCHOTTKY-BARRIER HEIGHT | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | INTERFACIAL LAYER | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | RESISTIVITY | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordAuthor | conductive filament | - |
dc.subject.keywordAuthor | metal-induced gap state | - |
dc.subject.keywordAuthor | fermi-level pinning | - |
dc.subject.keywordAuthor | metal-interlayer-semiconductor structure | - |
dc.subject.keywordAuthor | source/drain contact | - |
dc.subject.keywordAuthor | III-V semiconductor | - |
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