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Characterization of a CMOS 135-GHz Low Noise Amplifier with Two Different Noise Measurement Methods
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Doyoon | - |
| dc.contributor.author | Kim, Sooyeon | - |
| dc.contributor.author | Song, Kiryong | - |
| dc.contributor.author | Kim, Jungsoo | - |
| dc.contributor.author | Yoo, Junghwan | - |
| dc.contributor.author | Rieh, Jae-Sung | - |
| dc.date.accessioned | 2021-09-02T08:38:28Z | - |
| dc.date.available | 2021-09-02T08:38:28Z | - |
| dc.date.created | 2021-06-16 | - |
| dc.date.issued | 2018-08 | - |
| dc.identifier.issn | 1598-1657 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/74243 | - |
| dc.description.abstract | A D-band low-noise amplifier (LNA) has been developed based on a 65-nm CMOS technology, which showed a measured peak gain of 16.1 dB at 134.5 GHz. The noise property of the fabricated amplifier was characterized with two different noise measurement techniques: the cryogenic Y-factor method and the N-times power method. The two methods showed a minimum value of the noise figure of 10.7 dB and 14.7 dB, respectively. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | IEEK PUBLICATION CENTER | - |
| dc.title | Characterization of a CMOS 135-GHz Low Noise Amplifier with Two Different Noise Measurement Methods | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
| dc.identifier.doi | 10.5573/JSTS.2018.18.4.536 | - |
| dc.identifier.scopusid | 2-s2.0-85052376389 | - |
| dc.identifier.wosid | 000442690300016 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.18, no.4, pp.536 - 540 | - |
| dc.relation.isPartOf | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
| dc.citation.title | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
| dc.citation.volume | 18 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 536 | - |
| dc.citation.endPage | 540 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART002375188 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | Noise | - |
| dc.subject.keywordAuthor | Y-factor method | - |
| dc.subject.keywordAuthor | N-times power method | - |
| dc.subject.keywordAuthor | 65 nm CMOS | - |
| dc.subject.keywordAuthor | Low-noise amplifier | - |
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