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Ligand-Asymmetric Janus Quantum Dots for Efficient Blue-Quantum Dot Light-Emitting Diodes

Authors
Cho, IkjunJung, HeeyoungJeong, Byeong GukHahm, DonghyoChang, Jun HyukLee, TaesooChar, KookheonLee, Doh C.Lim, JaehoonLee, ChangheeCho, JinhanBae, Wan Ki
Issue Date
4-Jul-2018
Publisher
AMER CHEMICAL SOC
Keywords
ligand-asymmetric quantum dot; quantum dot-based light-emitting diode; interface engineering; hole transport layer engineering; charge balance
Citation
ACS APPLIED MATERIALS & INTERFACES, v.10, no.26, pp.22453 - 22459
Indexed
SCIE
SCOPUS
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
10
Number
26
Start Page
22453
End Page
22459
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/74373
DOI
10.1021/acsami.8b08300
ISSN
1944-8244
Abstract
We present ligand-asymmetric Janus quantum dots (QDs) to improve the device performance of quantum dot light-emitting diodes (QLEDs). Specifically, we devise blue QLEDs incorporating blue QDs with asymmetrically modified ligands, in which the bottom ligand of QDs in contact with ZnO electron-transport layer serves as a robust adhesive layer and an effective electron-blocking layer and the top ligand ensures uniform deposition of organic hole transport layers with enhanced hole injection properties. Suppressed electron overflow by the bottom ligand and stimulated hole injection enabled by the top ligand contribute synergistically to boost the balance of charge injection in blue QDs and therefore the device performance of blue QLEDs. As an ultimate achievement, the blue QLED adopting ligand-asymmetric QDs displays 2-fold enhancement in peak external quantum efficiency (EQE = 3.23%) compared to the case of QDs with native ligands (oleic acid) (peak EQE = 1.49%). The present study demonstrates an integrated strategy to control over the charge injection properties into QDs via ligand engineering that enables enhancement of the device performance of blue QLEDs and thus promises successful realization of white light-emitting devices using QDs.
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