A SPICE model of silicon tunneling field-effect transistors

Abstract

In this study, we propose a precise model of silicon tunneling field-effect transistors (TFETs) by modifying the Kane-Sze tunneling formula. In our model, a reference device is calibrated by utilizing TCAD and SPICE simulation. Electrical parameters extracted in our TCAD simulation are applied to a SPICE model not only for adopting the off-state current of a p-i-n diode under a reverse bias state but also for developing the threshold voltage and electric field equations. Furthermore, a basic complementary TFET inverter is simulated to demonstrate the capabilities of our proposed model. (C) 2018 Elsevier B.V. All rights reserved.