Comparison of Two Layout Options for 110-GHz CMOS LC Cross-Coupled Oscillators
- Authors
- Kim, Doyoon; Rieh, Jae-Sung
- Issue Date
- 4월-2018
- Publisher
- KOREAN INST ELECTROMAGNETIC ENGINEERING & SCIENCE
- Keywords
- Layout; LC Cross-Coupled; Oscillators; Signal Generation; 65-nm CMOS
- Citation
- JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE, v.18, no.2, pp.141 - 143
- Indexed
- SCOPUS
KCI
- Journal Title
- JOURNAL OF ELECTROMAGNETIC ENGINEERING AND SCIENCE
- Volume
- 18
- Number
- 2
- Start Page
- 141
- End Page
- 143
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/76280
- DOI
- 10.26866/jees.2018.18.2.141
- ISSN
- 2671-7255
- Abstract
- Two 110-GHz oscillators have been developed in 65-nm CMOS technology. To study the effect of layout on the circuit performance, both oscillators had the same LC cross-coupled topology but different layout schemes of the circuit. The oscillator with the conventional cross-coupled design (OSC1), showed an output power of -3.9 dBm at 111 GHz with a phase noise of -75 dBc/Hz at 1-MHz offset. On the other hand, OSC2, with a modified cross-coupled line layout, generated an output power of -2.0 dBm at 117 GHz with a phase noise of -77 dBc/Hz at 1-MHz offset. The result indicates that the optimized layout can improve key oscillator performances such as oscillation frequency and output power.
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